SIE820DF-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET N-CH 20V 50A 10POLARPAK
Packaging: Cut Tape (CT)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 4.5V
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-PolarPAK® (S)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 159.92 грн |
| 10+ | 129.79 грн |
| 100+ | 108.76 грн |
| 500+ | 90.1 грн |
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Технічний опис SIE820DF-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 20V 50A 10POLARPAK, Packaging: Tape & Reel (TR), Package / Case: 10-PolarPAK® (S), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 4.5V, Power Dissipation (Max): 5.2W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 10-PolarPAK® (S), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V.
Інші пропозиції SIE820DF-T1-GE3
| Фото | Назва | Виробник | Інформація |
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SIE820DF-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 20V 50A 10POLARPAK Packaging: Tape & Reel (TR) Package / Case: 10-PolarPAK® (S) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 4.5V Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 10-PolarPAK® (S) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V |
товар відсутній |