SIE878DF-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET N-CH 25V 45A 10POLARPAK
Packaging: Tape & Reel (TR)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 5.2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 10-PolarPAK® (L)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 12.5 V
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Технічний опис SIE878DF-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 25V 45A 10POLARPAK, Packaging: Tape & Reel (TR), Package / Case: 10-PolarPAK® (L), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, Power Dissipation (Max): 5.2W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 10-PolarPAK® (L), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 12.5 V.
Інші пропозиції SIE878DF-T1-GE3
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SIE878DF-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 25V 45A 10POLARPAK Packaging: Cut Tape (CT) Package / Case: 10-PolarPAK® (L) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 5.2W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 10-PolarPAK® (L) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 12.5 V |
товару немає в наявності |
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SIE878DF-T1-GE3 | Виробник : Vishay / Siliconix |
MOSFET 25V Vds 20V Vgs PolarPAK |
товару немає в наявності |