SIE882DF-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 25V 60A 10POLARPAK, Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 12.5 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 10-PolarPAK® (L), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 5.2W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 10-PolarPAK® (L), Packaging: Tape & Reel (TR).