SIHA125N60EF-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V
| Кількість | Ціна |
|---|---|
| 1+ | 377.08 грн |
| 50+ | 189.62 грн |
| 100+ | 172.86 грн |
| 500+ | 134.66 грн |
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Технічний опис SIHA125N60EF-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 11A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V.
Інші пропозиції SIHA125N60EF-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SIHA125N60EF-GE3 | Виробник : Vishay Semiconductors |
MOSFETs TO220 600V 11A N-CH MOSFET |
товару немає в наявності |
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| SIHA125N60EF-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 66A; 179W; TO220FP Polarisation: unipolar Gate charge: 47nC On-state resistance: 0.125Ω Drain current: 7A Gate-source voltage: ±30V Power dissipation: 179W Pulsed drain current: 66A Case: TO220FP Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
товару немає в наявності |