SIHA17N80AEF-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
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Технічний опис SIHA17N80AEF-GE3 Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V.
Інші пропозиції SIHA17N80AEF-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SIHA17N80AEF-GE3 | Vishay |
MOSFETs TO220 800V 6.5A N-CH MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| SIHA17N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 32A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.1A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 305mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 63nC Pulsed drain current: 32A |
товару немає в наявності |
В кошику од. на суму грн. |
| SIHA17N80AEF-GE3 |
|
Виробник: Vishay
MOSFETs TO220 800V 6.5A N-CH MOSFET
MOSFETs TO220 800V 6.5A N-CH MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SIHA17N80AEF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 32A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.1A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 63nC
Pulsed drain current: 32A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 32A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.1A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 63nC
Pulsed drain current: 32A
товару немає в наявності
В кошику
од. на суму грн.