SIHB12N50E-GE3 Vishay / Siliconix
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 252.76 грн |
| 10+ | 161.56 грн |
| 100+ | 97.60 грн |
| 500+ | 81.34 грн |
| 1000+ | 74.68 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
31-40 дні (днів)
Мінімальна партія:
2 шт
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Технічний опис SIHB12N50E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 500V 10.5A D2PAK, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V.
Інші пропозиції SIHB12N50E-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SIHB12N50E-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 500V 10.5A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SIHB12N50E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 114W Case: D2PAK; TO263 Mounting: SMD Gate charge: 50nC Drain current: 6.6A Kind of channel: enhancement Drain-source voltage: 500V Gate-source voltage: ±30V On-state resistance: 0.38Ω Pulsed drain current: 21A |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| SIHB12N50E-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 10.5A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Description: MOSFET N-CH 500V 10.5A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| SIHB12N50E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 114W
Case: D2PAK; TO263
Mounting: SMD
Gate charge: 50nC
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Pulsed drain current: 21A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 114W
Case: D2PAK; TO263
Mounting: SMD
Gate charge: 50nC
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Pulsed drain current: 21A
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.