SIHB22N60ET1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET N-CH 600V 21A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
на замовлення 555 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 226.49 грн |
| 10+ | 182.74 грн |
| 100+ | 147.84 грн |
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Технічний опис SIHB22N60ET1-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V.
Інші пропозиції SIHB22N60ET1-GE3 за ціною від 118.23 грн до 245.82 грн
| Фото | Назва | Виробник | Інформація |
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SIHB22N60ET1-GE3 | Виробник : Vishay / Siliconix |
MOSFET 600V Vds E Series D2PAK TO-263 |
на замовлення 328 шт: термін постачання 21-30 дні (днів) |
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SIHB22N60ET1-GE3 | Виробник : Vishay |
E Series Power MOSFET |
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| SIHB22N60ET1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIHB22N60ET1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 600V 21A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V |
товар відсутній |
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| SIHB22N60ET1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |