SIHB24N65EF-GE3 Vishay / Siliconix
на замовлення 839 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 417.99 грн |
| 10+ | 346.15 грн |
| 25+ | 284.35 грн |
| 100+ | 243.07 грн |
| 250+ | 229.75 грн |
| 500+ | 217.09 грн |
| 1000+ | 184.46 грн |
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Технічний опис SIHB24N65EF-GE3 Vishay / Siliconix
Description: MOSFET N-CH 650V 24A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V.
Інші пропозиції SIHB24N65EF-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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SIHB24N65EF-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK |
товар відсутній |
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| SIHB24N65EF-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 65A; 250W Kind of package: reel; tape Pulsed drain current: 65A Power dissipation: 250W Gate charge: 122nC Polarisation: unipolar Drain current: 15A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: D2PAK; TO263 On-state resistance: 156mΩ Mounting: SMD кількість в упаковці: 1 шт |
товар відсутній |
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SIHB24N65EF-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 650V 24A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V |
товар відсутній |
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| SIHB24N65EF-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 65A; 250W Kind of package: reel; tape Pulsed drain current: 65A Power dissipation: 250W Gate charge: 122nC Polarisation: unipolar Drain current: 15A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: D2PAK; TO263 On-state resistance: 156mΩ Mounting: SMD |
товар відсутній |