SIHD2N80E-GE3 Vishay Semiconductors
на замовлення 78446 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.4 грн |
| 10+ | 66.6 грн |
| 100+ | 45.19 грн |
| 500+ | 41.01 грн |
| 1000+ | 35.65 грн |
| 3000+ | 35.18 грн |
| 6000+ | 34.52 грн |
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Технічний опис SIHD2N80E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 800V 2.8A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V.
Інші пропозиції SIHD2N80E-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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SIHD2N80E-GE3 | Виробник : Vishay Siliconix |
 Description: MOSFET N-CH 800V 2.8A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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SIHD2N80E-GE3 | Виробник : Vishay |
E Series Power MOSFET |
товар відсутній |
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| SIHD2N80E-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape On-state resistance: 2.75Ω Drain current: 1.8A Drain-source voltage: 800V Power dissipation: 62.5W Polarisation: unipolar Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 5A кількість в упаковці: 1 шт |
товар відсутній |
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| SIHD2N80E-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape On-state resistance: 2.75Ω Drain current: 1.8A Drain-source voltage: 800V Power dissipation: 62.5W Polarisation: unipolar Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 5A |
товар відсутній |