| Кількість | Ціна |
|---|---|
| 5+ | 67.45 грн |
| 10+ | 58.22 грн |
| 100+ | 34.56 грн |
| 500+ | 28.91 грн |
| 1000+ | 24.58 грн |
| 3000+ | 20.88 грн |
| 6000+ | 20.11 грн |
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Технічний опис SIHD3N50D-GE3 Vishay / Siliconix
Description: MOSFET N-CH 500V 3A TO252AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 69W (Tc), Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK.
Інші пропозиції SIHD3N50D-GE3 за ціною від 25.48 грн до 95.84 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHD3N50D-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 500V 3A TO252AAVgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
|
| SIHD3N50D-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 3A TO252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Description: MOSFET N-CH 500V 3A TO252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 95.84 грн |
| 10+ | 58.02 грн |
| 100+ | 38.31 грн |
| 500+ | 28.03 грн |
| 1000+ | 25.48 грн |