SIHF28N60EF-GE3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 1+ | 532.78 грн |
| 10+ | 351.72 грн |
| 100+ | 247.19 грн |
| 500+ | 222.75 грн |
| 1000+ | 205.29 грн |
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Технічний опис SIHF28N60EF-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 28A TO220, Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220 Full Pack, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 39W (Tc), Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції SIHF28N60EF-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SIHF28N60EF-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 600V 28A TO220Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| SIHF28N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 75A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 123mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| SIHF28N60EF-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 28A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 28A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SIHF28N60EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 75A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 75A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 123mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.