SIHF7N60E-E3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Технічний опис SIHF7N60E-E3 Vishay Siliconix
Description: MOSFET N-CH 600V 7A TO220, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220 Full Pack, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 31W (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції SIHF7N60E-E3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SIHF7N60E-E3 | Vishay / Siliconix |
MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. |
| SIHF7N60E-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 40nC Pulsed drain current: 18A |
товару немає в наявності |
В кошику од. на суму грн. |
| SIHF7N60E-E3 |
|
Виробник: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK
MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| SIHF7N60E-E3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Pulsed drain current: 18A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Pulsed drain current: 18A
товару немає в наявності
В кошику
од. на суму грн.