SIHF8N50L-E3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 2+ | 170.26 грн |
| 10+ | 107.60 грн |
| 100+ | 64.24 грн |
| 500+ | 54.95 грн |
| 1000+ | 46.64 грн |
| 2000+ | 45.18 грн |
| 5000+ | 43.50 грн |
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Технічний опис SIHF8N50L-E3 Vishay / Siliconix
Description: MOSFET N-CH 500V 8A TO220, Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 0 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220 Full Pack, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tape & Reel (TR).
Інші пропозиції SIHF8N50L-E3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SIHF8N50L-E3 | Vishay Siliconix |
 Description: MOSFET N-CH 500V 8A TO220Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 0 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| SIHF8N50L-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 0 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 500V 8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 0 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.