Технічний опис SIHF9520S-GE3 Vishay / Siliconix
Description: MOSFET P-CH 100V 6.8A D2PAK, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 60W (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB.
Інші пропозиції SIHF9520S-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SIHF9520S-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 100V 6.8A D2PAKPackaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SIHF9520S-GE3 | Vishay |
Trans MOSFET P-CH 100V 6.8A 3-Pin(2+Tab) D2PAK |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| SIHF9520S-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 6.8A D2PAK
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description: MOSFET P-CH 100V 6.8A D2PAK
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
товару немає в наявності
В кошику
од. на суму грн.
| SIHF9520S-GE3 |
|
Виробник: Vishay
Trans MOSFET P-CH 100V 6.8A 3-Pin(2+Tab) D2PAK
Trans MOSFET P-CH 100V 6.8A 3-Pin(2+Tab) D2PAK
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.