Технічний опис SIHF9640S-GE3 Vishay
Description: MOSFET P-CH 200V 11A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V, Power Dissipation (Max): 3W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D²PAK (TO-263), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.
Інші пропозиції SIHF9640S-GE3
| Фото | Назва | Виробник | Інформація |
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SIHF9640S-GE3 | Виробник : Vishay |
 Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK |
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| SIHF9640S-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W Mounting: SMD Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -44A Case: D2PAK; TO263 Drain-source voltage: -200V Drain current: -6.8A On-state resistance: 0.5Ω Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
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SIHF9640S-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 200V 11A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
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SIHF9640S-GE3 | Виробник : Vishay / Siliconix |
MOSFET -200V Vds 20V Vgs D2PAK (TO-263) |
товар відсутній |
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| SIHF9640S-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W Mounting: SMD Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -44A Case: D2PAK; TO263 Drain-source voltage: -200V Drain current: -6.8A On-state resistance: 0.5Ω Type of transistor: P-MOSFET |
товар відсутній |