SIHFBF30S-GE3 Vishay Siliconix

Description: MOSFET N-CHANNEL 900V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), FET Type: N-Channel, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.