SIHFRC20TR-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 1458 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 89.59 грн |
| 10+ | 56.67 грн |
| 100+ | 37.49 грн |
| 500+ | 27.45 грн |
| 1000+ | 24.96 грн |
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Технічний опис SIHFRC20TR-GE3 Vishay Siliconix
Description: MOSFET N-CHANNEL 600V, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Інші пропозиції SIHFRC20TR-GE3 за ціною від 20.44 грн до 96.62 грн
| Фото | Назва | Виробник | Інформація |
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SIHFRC20TR-GE3 | Виробник : Vishay / Siliconix |
MOSFETs TO252 600V 2A N-CH MOSFET |
на замовлення 3869 шт: термін постачання 21-30 дні (днів) |
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| SIHFRC20TR-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 18nC Kind of channel: enhancement Drain current: 1.3A On-state resistance: 4.4Ω Pulsed drain current: 8A Gate-source voltage: ±20V Case: DPAK; TO252 Power dissipation: 42W Mounting: SMD Drain-source voltage: 600V кількість в упаковці: 1 шт |
товару немає в наявності |
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SIHFRC20TR-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CHANNEL 600V Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
товару немає в наявності |
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| SIHFRC20TR-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 18nC Kind of channel: enhancement Drain current: 1.3A On-state resistance: 4.4Ω Pulsed drain current: 8A Gate-source voltage: ±20V Case: DPAK; TO252 Power dissipation: 42W Mounting: SMD Drain-source voltage: 600V |
товару немає в наявності |