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Технічний опис SIHG17N60D-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 17A TO247AC, Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AC, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 277.8W (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції SIHG17N60D-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SIHG17N60D-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 600V 17A TO247ACInput Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. |
| SIHG17N60D-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.7A; Idm: 48A; 277.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.7A Pulsed drain current: 48A Power dissipation: 277.8W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.34Ω Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |