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SIHG25N60EFL-GE3

SIHG25N60EFL-GE3 Vishay / Siliconix

sihg25n60efl.pdf
Виробник: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-247AC
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
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Технічний опис SIHG25N60EFL-GE3 Vishay / Siliconix

Description: MOSFET N-CH 600V 25A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V.

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SIHG25N60EFL-GE3 SIHG25N60EFL-GE3 Vishay Siliconix sihg25n60efl.pdf Description: MOSFET N-CH 600V 25A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
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SIHG25N60EFL-GE3 VISHAY sihg25n60efl.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 61A; 250W; TO247AC
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 146mΩ
Drain current: 16A
Gate-source voltage: ±30V
Power dissipation: 250W
Pulsed drain current: 61A
Case: TO247AC
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
товару немає в наявності
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SIHG25N60EFL-GE3 sihg25n60efl.pdf
SIHG25N60EFL-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 25A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG25N60EFL-GE3 sihg25n60efl.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 61A; 250W; TO247AC
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 146mΩ
Drain current: 16A
Gate-source voltage: ±30V
Power dissipation: 250W
Pulsed drain current: 61A
Case: TO247AC
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.