Технічний опис SiHG64N65E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 650V 64A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 47mOhm @ 32A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 369 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7497 pF @ 100 V.
Інші пропозиції SiHG64N65E-GE3 за ціною від 539.55 грн до 1045.58 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|
| SiHG64N65E-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 650V 64A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 32A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 369 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7497 pF @ 100 V |
на замовлення 479 шт: термін постачання 21-31 дні (днів) |
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| SiHG64N65E-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 64A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 32A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 369 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7497 pF @ 100 V
Description: MOSFET N-CH 650V 64A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 32A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 369 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7497 pF @ 100 V
на замовлення 479 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1045.58 грн |
| 10+ | 708.13 грн |
| 100+ | 539.55 грн |