SIHG80N60E-GE3 VISHAY
Виробник: VISHAY
Description: VISHAY - SIHG80N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 80 A, 0.03 ohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 80A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 520W
Bauform - Transistor: TO-247AC
Anzahl der Pins: 3Pin(s)
Produktpalette: E
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: Lead (21-Jan-2025)
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Технічний опис SIHG80N60E-GE3 VISHAY
Description: VISHAY - SIHG80N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 80 A, 0.03 ohm, TO-247AC, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: YES, Dauer-Drainstrom Id: 80A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 520W, Bauform - Transistor: TO-247AC, Anzahl der Pins: 3Pin(s), Produktpalette: E, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.03ohm, SVHC: Lead (21-Jan-2025).
Інші пропозиції SIHG80N60E-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SIHG80N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 80A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 443 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SIHG80N60E-GE3 | Vishay / Siliconix |
MOSFETs 600V Vds 30V Vgs TO-247AC |
товару немає в наявності |
В кошику од. на суму грн. |
| SIHG80N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Pulsed drain current: 268A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 30mΩ Mounting: THT Gate charge: 443nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| SIHG80N60E-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 80A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 443 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 100 V
Description: MOSFET N-CH 600V 80A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 443 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| SIHG80N60E-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-247AC
MOSFETs 600V Vds 30V Vgs TO-247AC
товару немає в наявності
В кошику
од. на суму грн.
| SIHG80N60E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 268A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 443nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 268A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 443nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.