| Кількість | Ціна |
|---|---|
| 1+ | 568.21 грн |
| 10+ | 391.50 грн |
| 100+ | 265.01 грн |
| 1000+ | 248.80 грн |
| 3000+ | 225.54 грн |
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Технічний опис SIHH085N60EF-T1GE3 Vishay / Siliconix
Description: EF SERIES POWER MOSFET WITH FAST, Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 184W (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції SIHH085N60EF-T1GE3 за ціною від 244.81 грн до 626.41 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIHH085N60EF-T1GE3 | Vishay Siliconix |
 Description: EF SERIES POWER MOSFET WITH FASTInput Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 184W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 5665 шт: термін постачання 21-31 дні (днів) |
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| SIHH085N60EF-T1GE3 |
|
Виробник: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: EF SERIES POWER MOSFET WITH FAST
Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 5665 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 626.41 грн |
| 10+ | 410.49 грн |
| 100+ | 301.76 грн |
| 500+ | 244.81 грн |