SIHH100N60E-T1-GE3 Vishay / Siliconix
на замовлення 1507 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 329.9 грн |
| 10+ | 291.81 грн |
| 25+ | 237.55 грн |
| 100+ | 224.73 грн |
| 250+ | 220.01 грн |
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Технічний опис SIHH100N60E-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 28A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V, Power Dissipation (Max): 174W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V.
Інші пропозиції SIHH100N60E-T1-GE3
| Фото | Назва | Виробник | Інформація |
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SIHH100N60E-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 600V 28A 4-Pin PowerPAK EP T/R |
товар відсутній |
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| SIHH100N60E-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 63A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 63A Power dissipation: 174W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIHH100N60E-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 600V 28A PPAK 8 X 8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V Power Dissipation (Max): 174W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
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SIHH100N60E-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 600V 28A PPAK 8 X 8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V Power Dissipation (Max): 174W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
товар відсутній |
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| SIHH100N60E-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 63A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 63A Power dissipation: 174W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |