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SIHH100N65E-T1-GE3

SIHH100N65E-T1-GE3 Vishay

sihh100n65e.pdf
Виробник: Vishay
MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V
на замовлення 2469 шт:
термін постачання 21-30 дні (днів)
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Технічний опис SIHH100N65E-T1-GE3 Vishay

Description: E SERIES POWER MOSFET 650 V (D-, Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 184W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).

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SIHH100N65E-T1-GE3 SIHH100N65E-T1-GE3 Vishay Siliconix sihh100n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIHH100N65E-T1-GE3 SIHH100N65E-T1-GE3 Vishay Siliconix sihh100n65e.pdf Description: E SERIES POWER MOSFET 650 V (D-
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
SIHH100N65E-T1-GE3 sihh100n65e.pdf
SIHH100N65E-T1-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SIHH100N65E-T1-GE3 sihh100n65e.pdf
SIHH100N65E-T1-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.