SIHH100N65E-T1-GE3 Vishay
на замовлення 2685 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 737.28 грн |
| 10+ | 622.68 грн |
| 25+ | 490.70 грн |
| 100+ | 450.97 грн |
| 250+ | 424.49 грн |
| 500+ | 398.00 грн |
| 1000+ | 357.54 грн |
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Технічний опис SIHH100N65E-T1-GE3 Vishay
Description: E SERIES POWER MOSFET 650 V (D-, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V, Power Dissipation (Max): 184W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V.
Інші пропозиції SIHH100N65E-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
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SIHH100N65E-T1-GE3 | Виробник : Vishay Siliconix |
 Description: E SERIES POWER MOSFET 650 V (D-Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V Power Dissipation (Max): 184W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V |
товару немає в наявності |
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SIHH100N65E-T1-GE3 | Виробник : Vishay Siliconix |
Description: E SERIES POWER MOSFET 650 V (D- Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V Power Dissipation (Max): 184W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V |
товару немає в наявності |