SiHH11N60EF-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET N-CH 600V 11A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
на замовлення 1405 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 360.50 грн |
| 10+ | 229.98 грн |
| 100+ | 163.73 грн |
| 500+ | 127.10 грн |
| 1000+ | 118.58 грн |
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Технічний опис SiHH11N60EF-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 11A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V.
Інші пропозиції SiHH11N60EF-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SIHH11N60EF-T1-GE3 | Виробник : Vishay |
Trans MOSFET N-CH 600V 11A 4-Pin PowerPAK EP T/R |
товару немає в наявності |
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| SiHH11N60EF-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 27A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 114W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 357mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 62nC Pulsed drain current: 27A кількість в упаковці: 1 шт |
товару немає в наявності |
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SiHH11N60EF-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 600V 11A PPAK 8 X 8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V |
товару немає в наявності |
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SiHH11N60EF-T1-GE3 | Виробник : Vishay / Siliconix |
MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 |
товару немає в наявності |
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| SiHH11N60EF-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 27A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 114W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 357mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 62nC Pulsed drain current: 27A |
товару немає в наявності |