SIHH155N60EF-T1GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
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Технічний опис SIHH155N60EF-T1GE3 Vishay Siliconix
Description: VISHAY - SIHH155N60EF-T1GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 18 A, 0.159 ohm, PowerPAK, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 600V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 18A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, Gate-Source-Schwellenspannung, max.: 5V, Verlustleistung: 156W, SVHC: Lead (07-Nov-2024), Bauform - Transistor: PowerPAK, Anzahl der Pins: 4Pin(s), Produktpalette: EF Series, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.159ohm.
Інші пропозиції SIHH155N60EF-T1GE3 за ціною від 144.54 грн до 464.35 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIHH155N60EF-T1GE3 | VISHAY |
Description: VISHAY - SIHH155N60EF-T1GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 18 A, 0.159 ohm, PowerPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 600V rohsCompliant: Y-EX Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 5V Verlustleistung: 156W SVHC: Lead (07-Nov-2024) Bauform - Transistor: PowerPAK Anzahl der Pins: 4Pin(s) Produktpalette: EF Series productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.159ohm |
на замовлення 3050 шт: термін постачання 21-31 дні (днів) |
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SIHH155N60EF-T1GE3 | VISHAY |
Description: VISHAY - SIHH155N60EF-T1GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 18 A, 0.159 ohm, PowerPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 600V rohsCompliant: Y-EX Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 5V Verlustleistung: 156W SVHC: Lead (07-Nov-2024) Bauform - Transistor: PowerPAK Anzahl der Pins: 4Pin(s) Produktpalette: EF Series productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.159ohm |
на замовлення 3050 шт: термін постачання 21-31 дні (днів) |
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SIHH155N60EF-T1GE3 | Vishay Siliconix |
Description: EF SERIES POWER MOSFET WITH FAST Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SIHH155N60EF-T1GE3 | Vishay / Siliconix |
MOSFETs N-CHANNEL 600V |
на замовлення 5778 шт: термін постачання 21-30 дні (днів) |
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Виробник: VISHAY
Description: VISHAY - SIHH155N60EF-T1GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 18 A, 0.159 ohm, PowerPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 18A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 156W
SVHC: Lead (07-Nov-2024)
Bauform - Transistor: PowerPAK
Anzahl der Pins: 4Pin(s)
Produktpalette: EF Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.159ohm
Description: VISHAY - SIHH155N60EF-T1GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 18 A, 0.159 ohm, PowerPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 18A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 156W
SVHC: Lead (07-Nov-2024)
Bauform - Transistor: PowerPAK
Anzahl der Pins: 4Pin(s)
Produktpalette: EF Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.159ohm
на замовлення 3050 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 191.44 грн |
| 500+ | 164.91 грн |
| 1000+ | 144.54 грн |
| SIHH155N60EF-T1GE3 |
|
Виробник: VISHAY
Description: VISHAY - SIHH155N60EF-T1GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 18 A, 0.159 ohm, PowerPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 18A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 156W
SVHC: Lead (07-Nov-2024)
Bauform - Transistor: PowerPAK
Anzahl der Pins: 4Pin(s)
Produktpalette: EF Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.159ohm
Description: VISHAY - SIHH155N60EF-T1GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 18 A, 0.159 ohm, PowerPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 18A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 156W
SVHC: Lead (07-Nov-2024)
Bauform - Transistor: PowerPAK
Anzahl der Pins: 4Pin(s)
Produktpalette: EF Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.159ohm
на замовлення 3050 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 395.11 грн |
| 10+ | 265.58 грн |
| 100+ | 191.44 грн |
| 500+ | 164.91 грн |
| 1000+ | 144.54 грн |
| SIHH155N60EF-T1GE3 |
|
Виробник: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 410.06 грн |
| 10+ | 265.29 грн |
| 100+ | 191.54 грн |
| 500+ | 178.88 грн |
| SIHH155N60EF-T1GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs N-CHANNEL 600V
MOSFETs N-CHANNEL 600V
на замовлення 5778 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 464.35 грн |
| 10+ | 307.56 грн |
| 100+ | 192.72 грн |
| 500+ | 179.46 грн |
| 1000+ | 173.17 грн |
| 3000+ | 169.68 грн |