SiHH21N65E-T1-GE3 VISHAY
Виробник: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.8A; Idm: 53A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.8A
Pulsed drain current: 53A
Power dissipation: 156W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
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Технічний опис SiHH21N65E-T1-GE3 VISHAY
Description: MOSFET N-CH 650V 20.3A PPAK 8X8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2404 pF @ 100 V.
Інші пропозиції SiHH21N65E-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SiHH21N65E-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 650V 20.3A PPAK 8X8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2404 pF @ 100 V |
товару немає в наявності |
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SiHH21N65E-T1-GE3 | Виробник : Vishay / Siliconix |
MOSFETs 650V Vds 30V Vgs PowerPAK 8 x 8 |
товару немає в наявності |
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| SiHH21N65E-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.8A; Idm: 53A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.8A Pulsed drain current: 53A Power dissipation: 156W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |