SiHH26N60EF-T1-GE3 Vishay / Siliconix
на замовлення 2920 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 552.74 грн |
| 10+ | 416.25 грн |
| 25+ | 326.64 грн |
| 100+ | 287.65 грн |
| 250+ | 270.00 грн |
| 500+ | 256.75 грн |
| 1000+ | 251.60 грн |
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Технічний опис SiHH26N60EF-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 24A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 141mOhm @ 13A, 10V, Power Dissipation (Max): 202W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 100 V.
Інші пропозиції SiHH26N60EF-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SiHH26N60EF-T1-GE3 | Виробник : Vishay Siliconix |
 Description: MOSFET N-CH 600V 24A PPAK 8 X 8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 141mOhm @ 13A, 10V Power Dissipation (Max): 202W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 100 V |
товару немає в наявності |
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SiHH26N60EF-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 600V 24A PPAK 8 X 8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 141mOhm @ 13A, 10V Power Dissipation (Max): 202W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 100 V |
товару немає в наявності |