Технічний опис SIHH28N60E-T1-GE3 Vishay
Description: MOSFET N-CH 600V 29A PPAK 8 X 8, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 14A, 10V, Power Dissipation (Max): 202W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 100 V.
Інші пропозиції SIHH28N60E-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| SIHH28N60E-T1-GE3 | Виробник : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 76A; 202W Drain-source voltage: 600V Drain current: 19A On-state resistance: 98mΩ Type of transistor: N-MOSFET Power dissipation: 202W Polarisation: unipolar Kind of package: reel; tape Gate charge: 129nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 76A Mounting: SMD Case: PowerPAK® 8x8L кількість в упаковці: 1 шт |
товару немає в наявності |
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SIHH28N60E-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 600V 29A PPAK 8 X 8 Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 14A, 10V Power Dissipation (Max): 202W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 100 V |
товару немає в наявності |
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SIHH28N60E-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 |
товару немає в наявності |
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| SIHH28N60E-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 76A; 202W Drain-source voltage: 600V Drain current: 19A On-state resistance: 98mΩ Type of transistor: N-MOSFET Power dissipation: 202W Polarisation: unipolar Kind of package: reel; tape Gate charge: 129nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 76A Mounting: SMD Case: PowerPAK® 8x8L |
товару немає в наявності |