SIHJ7N65E-T1-GE3 Vishay / Siliconix
на замовлення 2629 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 178.24 грн |
| 10+ | 145.9 грн |
| 100+ | 101.63 грн |
| 250+ | 93 грн |
| 500+ | 84.36 грн |
| 1000+ | 73.07 грн |
| 3000+ | 70.41 грн |
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Технічний опис SIHJ7N65E-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 650V 7.9A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc), Rds On (Max) @ Id, Vgs: 598mOhm @ 3.5A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V.
Інші пропозиції SIHJ7N65E-T1-GE3
| Фото | Назва | Виробник | Інформація |
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SIHJ7N65E-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 650V 7.9A 5-Pin(4+Tab) PowerPAK SO T/R |
товар відсутній |
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| SIHJ7N65E-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 17A Power dissipation: 96W Case: PowerPAK® SO8 Gate-source voltage: ±30V On-state resistance: 598mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIHJ7N65E-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 650V 7.9A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc) Rds On (Max) @ Id, Vgs: 598mOhm @ 3.5A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V |
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SIHJ7N65E-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 650V 7.9A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc) Rds On (Max) @ Id, Vgs: 598mOhm @ 3.5A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V |
товар відсутній |
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| SIHJ7N65E-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 17A Power dissipation: 96W Case: PowerPAK® SO8 Gate-source voltage: ±30V On-state resistance: 598mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |