SIHK055N60EF-T1GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3667 pF @ 100 V
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3667 pF @ 100 V
на замовлення 2040 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 573.41 грн |
10+ | 473.59 грн |
100+ | 394.66 грн |
500+ | 326.8 грн |
1000+ | 294.12 грн |
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Технічний опис SIHK055N60EF-T1GE3 Vishay Siliconix
Description: VISHAY - SIHK055N60EF-T1GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 40 A, 0.05 ohm, PowerPAK, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: YES, Dauer-Drainstrom Id: 40A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 236W, Gate-Source-Schwellenspannung, max.: 5V, euEccn: NLR, Verlustleistung: 236W, Bauform - Transistor: PowerPAK, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 8Pin(s), Produktpalette: EF Gen IV Series, productTraceability: No, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.05ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.05ohm, SVHC: No SVHC (17-Jan-2022).
Інші пропозиції SIHK055N60EF-T1GE3 за ціною від 292.41 грн до 691.26 грн
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ | ||||||||||||||||
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SIHK055N60EF-T1GE3 | Виробник : Vishay | MOSFET E SERIES PWR MOSFET 10V |
на замовлення 577 шт: термін постачання 21-30 дні (днів) |
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SIHK055N60EF-T1GE3 | Виробник : VISHAY |
Description: VISHAY - SIHK055N60EF-T1GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 40 A, 0.05 ohm, PowerPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 236W Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 236W Bauform - Transistor: PowerPAK Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: EF Gen IV Series productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.05ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.05ohm SVHC: No SVHC (17-Jan-2022) |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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SIHK055N60EF-T1GE3 | Виробник : Vishay | SIHK055N60EF-T1GE3 |
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SIHK055N60EF-T1GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 110A; 236W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 110A Power dissipation: 236W Case: PowerPAK® 1012 Gate-source voltage: ±30V On-state resistance: 58mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIHK055N60EF-T1GE3 | Виробник : Vishay Siliconix |
Description: E SERIES POWER MOSFET WITH FAST Packaging: Tape & Reel (TR) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V Power Dissipation (Max): 236W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3667 pF @ 100 V |
товар відсутній |
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SIHK055N60EF-T1GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 110A; 236W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 110A Power dissipation: 236W Case: PowerPAK® 1012 Gate-source voltage: ±30V On-state resistance: 58mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |