SIHK065N60E-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1
Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Power Dissipation (Max): 192W (Tc)
Packaging: Cut Tape (CT)
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Технічний опис SIHK065N60E-T1-GE3 Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1, Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerBSFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerPAK®10 x 12, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 192W (Tc).
Інші пропозиції SIHK065N60E-T1-GE3 за ціною від 263.56 грн до 645.80 грн
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SIHK065N60E-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFETs PWRPK 600V 34A N-CH MOSFET |
на замовлення 3677 шт: термін постачання 21-30 дні (днів) |
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SIHK065N60E-T1-GE3 | Виробник : Vishay Siliconix |
Description: E SERIES POWER MOSFET POWERPAK 1 Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerBSFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK®10 x 12 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 192W (Tc) |
товару немає в наявності |