SIHK125N60EF-T1-GE3 Vishay Semiconductors
Виробник: Vishay Semiconductors
MOSFET N-Channel 40 V (D-S) MOSFET PowerPAK SO-8L, 2.3 mO a. 10V, 3.35 mO a. 4.5V
| Кількість | Ціна |
|---|---|
| 3+ | 147.99 грн |
| 10+ | 131.45 грн |
| 100+ | 92.00 грн |
| 500+ | 75.27 грн |
| 1000+ | 62.24 грн |
| 3000+ | 55.55 грн |
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Технічний опис SIHK125N60EF-T1-GE3 Vishay Semiconductors
Description: E SERIES POWER MOSFET WITH FAST, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Power Dissipation (Max): 132W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V.
Інші пропозиції SIHK125N60EF-T1-GE3 за ціною від 128.94 грн до 437.53 грн
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SIHK125N60EF-T1GE3 | Виробник : Vishay Semiconductors |
 MOSFETs PWRPK 600V 21A N-CH MOSFET |
на замовлення 1375 шт: термін постачання 21-30 дні (днів) |
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SIHK125N60EF-T1GE3 | Виробник : Vishay Siliconix |
Description: E SERIES POWER MOSFET WITH FAST Packaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V |
на замовлення 1995 шт: термін постачання 21-31 дні (днів) |
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SIHK125N60EF-T1GE3 | Виробник : Vishay Siliconix |
Description: E SERIES POWER MOSFET WITH FAST Packaging: Tape & Reel (TR) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V |
товару немає в наявності |
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| SIHK125N60EF-T1GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 54A; 132W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 54A Power dissipation: 132W Case: PowerPAK® 1012 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |