SIHL040N65E-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5344 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD-4L
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 391W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
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Технічний опис SIHL040N65E-GE3 Vishay Siliconix
Description: N-CHANNEL 650V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5344 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AD-4L, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 391W (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 65A (Tc).
Інші пропозиції SIHL040N65E-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
SIHL040N65E-GE3 | Виробник : Vishay Semiconductors |
MOSFETs N-CHANNEL 650V |
товару немає в наявності |