на замовлення 11604 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.7 грн |
| 11+ | 28.95 грн |
| 100+ | 19.3 грн |
| 500+ | 15.93 грн |
| 1000+ | 13.36 грн |
| 2500+ | 12.08 грн |
| 10000+ | 11.41 грн |
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Технічний опис SIHLL110TR-GE3 Vishay / Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V.
Інші пропозиції SIHLL110TR-GE3 за ціною від 14.18 грн до 41.61 грн
| Фото | Назва | Виробник | Інформація |
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SIHLL110TR-GE3 | Виробник : Vishay Siliconix |
 Description: MOSFET N-CH 100V 1.5A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
на замовлення 1431 шт: термін постачання 21-31 дні (днів) |
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SIHLL110TR-GE3 | Виробник : Vishay |
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R |
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SIHLL110TR-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223 Mounting: SMD Case: SOT223 Polarisation: unipolar On-state resistance: 760mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Kind of package: reel; tape Gate charge: 6.1nC Kind of channel: enhanced Gate-source voltage: ±10V Drain-source voltage: 100V Drain current: 0.93A кількість в упаковці: 1 шт |
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SIHLL110TR-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.5A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
товар відсутній |
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SIHLL110TR-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223 Mounting: SMD Case: SOT223 Polarisation: unipolar On-state resistance: 760mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Kind of package: reel; tape Gate charge: 6.1nC Kind of channel: enhanced Gate-source voltage: ±10V Drain-source voltage: 100V Drain current: 0.93A |
товар відсутній |