SIHLZ14STRL-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: LOGIC MOSFET N-CHANNEL 60V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
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Технічний опис SIHLZ14STRL-GE3 Vishay Siliconix
Description: LOGIC MOSFET N-CHANNEL 60V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 43W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc).
Інші пропозиції SIHLZ14STRL-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SIHLZ14STRL-GE3 | Виробник : Vishay Semiconductors | MOSFETs LOGIC MOSFET N-CHANNEL 60V |
товару немає в наявності |