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Технічний опис SIHP11N80E-GE3 Vishay / Siliconix
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 8A, Power dissipation: 179W, Case: TO220AB, Gate-source voltage: ±30V, On-state resistance: 440mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Pulsed drain current: 32A, Gate charge: 88nC.
Інші пропозиції SIHP11N80E-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SIHP11N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 88nC |
товару немає в наявності |
В кошику од. на суму грн. |
| SIHP11N80E-GE3 |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
товару немає в наявності
В кошику
од. на суму грн.