| Кількість | Ціна |
|---|---|
| 1+ | 364.15 грн |
| 10+ | 270.62 грн |
| 25+ | 209.48 грн |
| 100+ | 175.97 грн |
| 250+ | 167.59 грн |
| 500+ | 146.64 грн |
| 1000+ | 145.24 грн |
Відгуки про товар
Написати відгук
Технічний опис SIHP12N50C-E3 Vishay / Siliconix
Description: MOSFET N-CH 500V 12A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V.
Інші пропозиції SIHP12N50C-E3 за ціною від 137.51 грн до 401.42 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIHP12N50C-E3 | Vishay Siliconix |
 Description: MOSFET N-CH 500V 12A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
| SIHP12N50C-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 500V; 12A; 208W; TO220-3 Type of transistor: N-MOSFET Drain-source voltage: 500V Drain current: 12A Power dissipation: 208W Case: TO220-3 Gate-source voltage: 30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 48nC Kind of channel: enhancement |
на замовлення 850 шт: термін постачання 14-30 дні (днів) |
|
| SIHP12N50C-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 401.42 грн |
| 10+ | 257.80 грн |
| 100+ | 184.84 грн |
| 500+ | 144.28 грн |
| 1000+ | 137.51 грн |
| SIHP12N50C-E3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 500V; 12A; 208W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 500V; 12A; 208W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
на замовлення 850 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 250+ | 157.50 грн |