SIHP15N50E-GE3 VISHAY
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.2A
Pulsed drain current: 28A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 3+ | 181.82 грн |
| 5+ | 131.50 грн |
| 10+ | 115.38 грн |
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Технічний опис SIHP15N50E-GE3 VISHAY
Description: MOSFET N-CH 500V 14.5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V.
Інші пропозиції SIHP15N50E-GE3 за ціною від 53.83 грн до 222.02 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIHP15N50E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 14.5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V |
на замовлення 11346 шт: термін постачання 21-31 дні (днів) |
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SIHP15N50E-GE3 | Vishay Semiconductors |
MOSFETs 500V Vds 30V Vgs TO-220AB |
на замовлення 1259 шт: термін постачання 21-30 дні (днів) |
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| SIHP15N50E-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 14.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V
Description: MOSFET N-CH 500V 14.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V
на замовлення 11346 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 214.09 грн |
| 50+ | 102.24 грн |
| 100+ | 92.15 грн |
| 500+ | 69.88 грн |
| 1000+ | 64.54 грн |
| 2000+ | 60.06 грн |
| 5000+ | 54.30 грн |
| 10000+ | 53.83 грн |
| SIHP15N50E-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 500V Vds 30V Vgs TO-220AB
MOSFETs 500V Vds 30V Vgs TO-220AB
на замовлення 1259 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 222.02 грн |
| 10+ | 108.61 грн |
| 100+ | 85.28 грн |
| 500+ | 69.07 грн |
| 1000+ | 63.01 грн |
| 2000+ | 62.45 грн |