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SIHP21N60EF-GE3

SIHP21N60EF-GE3 Vishay Semiconductors

tf-sihp21n60ef-ge3.pdf
Виробник: Vishay Semiconductors
MOSFETs 600V Vds 30V Vgs TO-220AB
на замовлення 1925 шт:
термін постачання 21-30 дні (днів)
КількістьЦіна без ПДВ
1+348.74 грн
10+231.02 грн
100+184.32 грн
1000+118.74 грн
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Технічний опис SIHP21N60EF-GE3 Vishay Semiconductors

Description: MOSFET N-CH 600V 21A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V.

Інші пропозиції SIHP21N60EF-GE3

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
SIHP21N60EF-GE3 SIHP21N60EF-GE3 Vishay Siliconix tf-sihp21n60ef-ge3.pdf Description: MOSFET N-CH 600V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
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SIHP21N60EF-GE3 VISHAY tf-sihp21n60ef-ge3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 53A; 227W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 176mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Gate charge: 84nC
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SIHP21N60EF-GE3 tf-sihp21n60ef-ge3.pdf
SIHP21N60EF-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHP21N60EF-GE3 tf-sihp21n60ef-ge3.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 53A; 227W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 176mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Gate charge: 84nC
товару немає в наявності
В кошику  од. на суму  грн.