SIHP21N80AEF-GE3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 2+ | 253.36 грн |
| 10+ | 171.85 грн |
| 100+ | 106.84 грн |
| 500+ | 88.68 грн |
| 2000+ | 87.28 грн |
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Технічний опис SIHP21N80AEF-GE3 Vishay / Siliconix
Description: E SERIES POWER MOSFET WITH FAST, Power Dissipation (Max): 179W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 250µA.
Інші пропозиції SIHP21N80AEF-GE3 за ціною від 97.91 грн до 288.30 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIHP21N80AEF-GE3 | Vishay Siliconix |
 Description: E SERIES POWER MOSFET WITH FASTPower Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
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| SIHP21N80AEF-GE3 |
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Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Description: E SERIES POWER MOSFET WITH FAST
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 288.30 грн |
| 10+ | 181.78 грн |
| 100+ | 127.52 грн |
| 500+ | 97.91 грн |