Технічний опис SIHP22N60AE-GE3 Vishay
Description: MOSFET N-CH 600V 20A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V.
Інші пропозиції SIHP22N60AE-GE3
| Фото | Назва | Виробник | Інформація |
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Ціна |
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| SiHP22N60AE-GE3 | Виробник : VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 49A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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SiHP22N60AE-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 600V 20A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V |
товару немає в наявності |
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SiHP22N60AE-GE3 | Виробник : Vishay Semiconductors |
MOSFETs 600V Vds 30V Vgs TO-220AB |
товару немає в наявності |
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| SiHP22N60AE-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 49A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |