SIHP24N65EF-GE3 Vishay Siliconix

Description: MOSFET N-CH 650V 24A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 2656 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.