| Кількість | Ціна |
|---|---|
| 3+ | 125.46 грн |
| 10+ | 100.38 грн |
| 100+ | 68.85 грн |
| 500+ | 58.31 грн |
| 1000+ | 45.95 грн |
| 2000+ | 44.69 грн |
| 5000+ | 42.52 грн |
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Технічний опис SIHP8N50D-E3 Vishay / Siliconix
Description: MOSFET N-CH 500V 8.7A TO220AB, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 156W (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.
Інші пропозиції SIHP8N50D-E3 за ціною від 43.90 грн до 151.61 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHP8N50D-E3 | Vishay Siliconix |
 Description: MOSFET N-CH 500V 8.7A TO220ABPackage / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
| SIHP8N50D-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 8.7A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 500V 8.7A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 151.61 грн |
| 50+ | 71.05 грн |
| 100+ | 63.74 грн |
| 500+ | 47.77 грн |
| 1000+ | 43.90 грн |