| Кількість | Ціна |
|---|---|
| 4+ | 102.65 грн |
| 10+ | 81.10 грн |
| 100+ | 55.79 грн |
| 500+ | 47.34 грн |
| 1000+ | 41.69 грн |
| 5000+ | 34.49 грн |
| 10000+ | 34.22 грн |
Відгуки про товар
Написати відгук
Технічний опис SIHP8N50D-GE3 Vishay / Siliconix
Description: MOSFET N-CH 500V 8.7A TO220AB, Package / Case: TO-220-3, Packaging: Tube, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 156W (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Mounting Type: Through Hole, Drain to Source Voltage (Vdss): 500 V.
Інші пропозиції SIHP8N50D-GE3 за ціною від 60.37 грн до 130.40 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||
|---|---|---|---|---|---|---|---|---|---|
 |
SIHP8N50D-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 500V 8.7A TO220ABPackage / Case: TO-220-3 Packaging: Tube Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Mounting Type: Through Hole Drain to Source Voltage (Vdss): 500 V |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
|
| SIHP8N50D-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 8.7A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 500 V
Description: MOSFET N-CH 500V 8.7A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 500 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 130.40 грн |
| 50+ | 60.37 грн |