SiHS90N65E-E3 Vishay Siliconix

Description: MOSFET N-CH 650V 87A SUPER247, Input Capacitance (Ciss) (Max) @ Vds: 11826 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 591 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: SUPER-247™ (TO-274AA), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 625W (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 45A, 10V, Current - Continuous Drain (Id) @ 25°C: 87A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.