Технічний опис SIHU2N80E-GE3 Vishay
Description: MOSFET N-CH 800V 2.8A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V.
Інші пропозиції SIHU2N80E-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SIHU2N80E-GE3 | Виробник : VISHAY |
 SIHU2N80E-GE3 THT N channel transistors |
товару немає в наявності |
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SIHU2N80E-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 800V 2.8A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V |
товару немає в наявності |
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SIHU2N80E-GE3 | Виробник : Vishay / Siliconix |
MOSFETs 800V Vds 30V Vgs IPAK (TO-251) |
товару немає в наявності |