SIHU4N80AE-GE3 Vishay Siliconix

Description: MOSFET N-CH 800V 4.3A IPAK, Packaging: Tube, Package / Case: TO-251-3 Long Leads, IPak, TO-251AB, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK (TO-251), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V.