SIHU5N50D-GE3 VISHAY
Виробник: VISHAY
Description: VISHAY - SIHU5N50D-GE3 - Leistungs-MOSFET, n-Kanal, 500 V, 5.3 A, 1.5 ohm, TO-251, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 500V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 104W
Bauform - Transistor: TO-251
Anzahl der Pins: 3Pin(s)
Produktpalette: D
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1.5ohm
SVHC: Lead (19-Jan-2021)
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Технічний опис SIHU5N50D-GE3 VISHAY
Description: VISHAY - SIHU5N50D-GE3 - Leistungs-MOSFET, n-Kanal, 500 V, 5.3 A, 1.5 ohm, TO-251, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 500V, rohsCompliant: YES, Dauer-Drainstrom Id: 5.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 104W, Bauform - Transistor: TO-251, Anzahl der Pins: 3Pin(s), Produktpalette: D, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 1.5ohm, SVHC: Lead (19-Jan-2021).
Інші пропозиції SIHU5N50D-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SIHU5N50D-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 5.3A TO251 Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| SIHU5N50D-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W Mounting: THT Pulsed drain current: 10A Power dissipation: 104W Gate charge: 20nC Polarisation: unipolar Drain current: 3.4A Kind of channel: enhancement Drain-source voltage: 500V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: IPAK; TO251 On-state resistance: 1.5Ω |
товару немає в наявності |
В кошику од. на суму грн. | |
| SIHU5N50D-GE3 | Vishay |
Trans MOSFET N-CH 500V 5.3A 3-Pin(3+Tab) IPAK |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| SIHU5N50D-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A TO251
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 500V 5.3A TO251
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIHU5N50D-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W
Mounting: THT
Pulsed drain current: 10A
Power dissipation: 104W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 3.4A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK; TO251
On-state resistance: 1.5Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W
Mounting: THT
Pulsed drain current: 10A
Power dissipation: 104W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 3.4A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK; TO251
On-state resistance: 1.5Ω
товару немає в наявності
В кошику
од. на суму грн.
| SIHU5N50D-GE3 |
|
Виробник: Vishay
Trans MOSFET N-CH 500V 5.3A 3-Pin(3+Tab) IPAK
Trans MOSFET N-CH 500V 5.3A 3-Pin(3+Tab) IPAK
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.