SIHU6N80AE-GE3 Vishay Semiconductors
на замовлення 5334 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 146.14 грн |
| 10+ | 115.42 грн |
| 25+ | 91.31 грн |
| 100+ | 82.25 грн |
| 250+ | 81.50 грн |
| 3000+ | 70.63 грн |
| 6000+ | 39.84 грн |
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Технічний опис SIHU6N80AE-GE3 Vishay Semiconductors
Description: MOSFET N-CH 800V 5A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V.
Інші пропозиції SIHU6N80AE-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SIHU6N80AE-GE3 | Виробник : Vishay |
 Power MOSFET |
товару немає в наявності |
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| SIHU6N80AE-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 10A; 62.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 10A Power dissipation: 62.5W Case: IPAK; TO251 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 22.5nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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SIHU6N80AE-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 800V 5A TO251AA Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V |
товару немає в наявності |
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| SIHU6N80AE-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 10A; 62.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 10A Power dissipation: 62.5W Case: IPAK; TO251 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 22.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |